fqpf8n60c, each application characteristics FET 650V MOSFET, MOSFET, Fairchild FET and the FET transistor 1. The source electrode s, a gate g, a drain d respectively correspond to the transistor emitter e, base b , the collector c, similar to their effect. 2. FET is a voltage-controlled current devices controlled by vGS iD, its amplification factor gm is generally small, and therefore the ability of poor amplification FET; transistor is current controlled device 75V MOSFET, by iB (or iE) control iC. 3. FET gate FET hardly take the current (ig ?0); and the transistor base work always draw a certain current. Thus FET gate input resistance is higher than the input resistance of the transistor. fqp50n06, FET, MOSFET, low noise figure 800V MOSFET Fairchild FET, a high in the low-noise amplifier input stage and requires SNR FET circuits to choose. FET and transistors can be composed of a variety of amplifier and switching circuits, but because the former manufacturing process is simple and has low power consumption, good thermal stability, wide operating supply voltage range, etc. MOSFET, which is widely used in large-scale and ultra large scale integrated circuits. Transistor conduction resistance, FET resistance is small, only a few hundred milli-ohms, the current consumption devices, are generally made with FET switch to use, his efficiency is relatively high. Wal-electronics wholesale _MOSFET_ MOSFET are provided by the Dongguan City is fertile Electronic Technology Co., Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) strong, credible, FET and other industries in Dongguan, Guangdong has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead the electronics are fertile and you hand into the brilliant, for a better future!