g40n60 MOS tube 5n60c, FET, power MOSFET, IGBT some FET source and drain can be used interchangeably MOS transistor irf840, the gate voltage can be positive or negative, good flexibility than transistors. MOS field effect transistor can work at a very small tube IRFP450 low current and voltage conditions, and its manufacturing process can be easily put a lot of FET integrated on a silicon chip, so FET in LSI has been widely used. fqp50n06, FET, MOSFET, Fairchild FET is involved in the multi-conductive; transistors and low birthrate and two more sub-carriers involved in conducting, and the minority carrier concentration by temperature, radiation and other factors, and therefore have more than FET the temperature of the transistor stability, resistance to radiation and strong. At ambient conditions (temperature, etc.) should be used in case of highly variable FET. FET in a source metal and the substrate together, the source and drain can be used interchangeably MOS transistor, and the characteristic little change; and the collector and the emitter electrode of transistor used interchangeably, its characteristic differences are Large, β value will decrease much. MOS transistor irf840, are fertile Electronics (certified), MOS tube provided by the Dongguan City is fertile Electronic Technology Co., Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) is Dongguan, FET leader, over the years, the company is implementing the scientific management, innovation and development, the principle of honesty and trustworthiness, and satisfy customer needs. Wal-electronics leader in the positive with the staff warmly welcome all inquiries negotiations to create a positive future Wal-electron better.