irf3710z to-252 SMD FET, FET, power MOSFET Features: FET compared with bipolar transistor, FET has the following characteristics. (1) The FETs are voltage-controlled devices 12n60 FET, to control its ID (drain current) by VGS (gate to source voltage); the current control input (2) FET is extremely small, so it's input resistance (107 ~ 1012Ω) great. (3) It is the use of majority carrier conduction FET irfp460, so it better temperature stability; (4) it is composed of a voltage amplification factor of the amplifier circuit to be less than the transistor amplifier circuit consisting of a voltage amplification factor; (5 ) FET anti-radiation and strong; (6) due to electron diffusion messy shot noise caused by the movement it does not exist, so the low noise. irf640n irfp150 FET, FET, MOSFET power FET into junction FET (JFET) and insulated gate field effect transistor (MOS tube) into two categories. Press the channel material type and sub-type insulated gate N-channel and P-channel two kinds; by conducting ways: depletion mode and enhancement, JFET are depletion mode, both insulated gate field effect transistor there is a depletion type, but also enhanced. Junction field effect transistors can be divided into field-effect transistors and MOS field-effect transistors, MOS field effect transistor is divided into N-channel depletion-mode and enhanced; P channel depletion-mode and enhanced four categories. 12n60 FET | MOSFET | Wal electronic mosfet being provided by the Dongguan City is Wal-Electronic Technology Co., Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) strong, credible, FET and other industries in Dongguan, Guangdong has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead the electronics are fertile and you hand into the brilliant, for a better future!