irfp260N, FET, AC power MOSFET parameter exchange parameters can be divided into the output resistance and is generally between tens of thousands to hundreds of thousands of European low-frequency transconductance Europe two parameters IRF730 FET output resistance, and low-frequency transconductance general within a few tenths to a few milli-west range, special up to 100mS, or even higher. Low-frequency transconductance gm it is to describe the gate, drain-source voltage control action current. Capacitances of the FET capacitance between the three electrodes, it is smaller the value the better the performance of the tube. irf3205, FET, the gate of the power MOSFET pin junction type field identifying FET equivalent base of the transistor, the source and drain correspond to the transistor emitter and collector in the field effect tube pole. The multimeter R × 1k file, along with the two leads were used to measure positive and negative resistance between two pins each. When positive and negative resistance between two pins is equal to a IRF640 FET, when both the number of KΩ IRF9630 FET, the two pins for the drain D and source S (interchangeable), and the remaining a pin is the gate G. For four pin junction FET, the other pole is shielded pole (use ground). IRF730 FET, are fertile Electronics (certified), FET provided by the Dongguan City is Wal-Electronic Technology Co., Ltd. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) is Dongguan, FET leader, over the years, the company is implementing the scientific management, innovation and development, the principle of honesty and trustworthiness, and satisfy customer needs. Wal-electronics leader in the positive with the staff warmly welcome all inquiries negotiations to create a positive future Wal-electron better.