irfp460 IRF730 FET, FET, power MOSFET drain current IDSS DC saturation parameter which is defined as: when the gate voltage is equal to zero, between the source, and drain FET source voltage is greater than the pinch-off When voltage IRF9540N FET, a drain current corresponding. UGS required when a certain time UDS, so that the ID is reduced to a tiny current: pinch-off voltage UP which is defined as. It is defined as the turn-on voltage UT: required when certain time UDS IRF640 FET, so ID has reached a certain value UGS. irf3710z to-252 patch, FET, power MOSFET drain current maximum limit parameter ① refers pipe work drain current allowable upper limit value, ② maximum dissipation power is the power in the tube, the tube being limiting the maximum operating temperature, ③ maximum drain-source voltage is in the avalanche breakdown occurs, the drain current begins to rise sharply when the voltage, ④ maximum gate-source voltage is the gate-source voltage value increases sharply when the reverse current starts. In addition to these parameters, as well as inter-electrode capacitance, high-frequency parameters and other parameters. Drain, source breakdown voltage when a sharp increase in the drain current is generated when the avalanche breakdown UDS. Gate breakdown voltage JFET working properly, PN junction gate, a source in the reverse bias between the state, if the current is too high, the resulting breakdown. IRF9630 FET FET _ _ are fertile Electronics Dongguan City is provided by Wal-Electronic Technology Co., Ltd .. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) strong, credible, FET and other industries in Dongguan, Guangdong has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead the electronics are fertile and you hand into the brilliant, for a better future!