fqp50n06 IRF740 FET, FET, noise figure MOSFET, Fairchild FET small, low-noise amplifier input stage and require a higher signal to noise ratio of the circuit to choose the FET. FET and transistors can be composed of a variety of amplifier and switching circuits, but because the former manufacturing process is simple and has low power consumption FET, good thermal stability, wide operating supply voltage range, etc., which are widely used in large-scale and ultra large scale integrated circuits. Transistor conduction resistance, FET resistance is small, only a few hundred milli-ohms, the current electricity IRF1404 MOSFET devices are generally made with FET switch to use, his efficiency is relatively high. irfp460 IRF840 FET, FET, power MOSFET drain current IDSS DC saturation parameter which is defined as: when the gate voltage is equal to zero, between the source, and drain FET source voltage is greater than the pinch-off voltage, corresponding to the drain current. UGS required when a certain time UDS, so that the ID is reduced to a tiny current: pinch-off voltage UP which is defined as. It is defined as the turn-on voltage UT: When a certain time UDS, so that when you reach the desired ID UGS a certain value. IRFP3703 FET, FET, are fertile Electronics Dongguan City is provided by Wal-Electronic Technology Co., Ltd .. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) strong, credible, FET and other industries in Dongguan, Guangdong has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead the electronics are fertile and you hand into the brilliant, for a better future!