irf3710z to-252 patch, FET, power MOSFET drain current maximum limit parameter ① refers pipe work drain current allowable upper limit value, ② maximum dissipation power is the power in the tube, the tube being limit the maximum operating temperature of the MOS transistor 12n60, ③ the maximum drain-source voltage is the avalanche breakdown occurs, the drain current starts to sharply rise when the voltage, ④ the maximum gate-source voltage is the gate-source starts to increase sharply when a reverse current voltage value. In addition to these parameters outside the MOS transistor other parameters 10n60, as well as inter-electrode capacitance, high-frequency parameters. Drain, source breakdown voltage when a sharp increase in the drain current MOS, produce UDS when avalanche breakdown. Gate breakdown voltage JFET working properly, PN junction gate, a source in the reverse bias between the state, if the current is too high MOS transistor 7n60, then produce breakdown. irf540n, to-263, SMD FET, power MOSFET product characteristics (1) transfer characteristics: the role of the gate voltage on the control characteristics of the drain current is called metastasis. (2) Output characteristic: ID is called relationship UDS and output characteristics. Amplification (3) Junction FET: junction FET amplification generally refers to the voltage amplification. MOS tube 6n60_MOS pipe _ are fertile Electronics Dongguan City is provided by Wal-Electronic Technology Co., Ltd. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) strong, credible, FET and other industries in Dongguan, Guangdong has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead the electronics are fertile and you hand into the brilliant, for a better future!