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| No.13637641

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Information Name: | mos tube 24n50, mos tube, are fertile electronic |
Published: | 2015-01-14 |
Validity: | 0 |
Specifications: | Limited |
Quantity: | |
Price Description: | |
Detailed Product Description: | g40n60, the main difference FET, power MOSFET, IGBT and FET transistor in the electrical characteristics are the following: patch FET FET 1: FET is a voltage control device, the conductive case of the tube depends the gate voltage level. Transistor is a current control device, the conductive case of the tube depends on the size of the base current. 2: FET drain-source voltage characteristic static gate voltage UGS for parametric transistor output characteristic curve to the base current Ib as the reference variable. 3: the relationship between the current IDS and the gate of FET between UGS determined by the transconductance Gm, the relationship between transistor current Ic and Ib by the amplification factor β decision. In other words, the ability to zoom with Gm measure FET amplification capability of the transistor with β measure. 4: FET input impedance big mos tube 58n20, the input current is very small; small transistor input impedance, input current is larger when the conductive. 5: General FET power is small, large power transistor. fqp13n50c, FET, after much Fairchild MOSFET transistors in parallel, due to a corresponding increase in inter-electrode capacitance and frequency characteristics of distributed capacitance mos tube 20nm60, the amplifier deterioration caused by the parasitic oscillation frequency amplifier feedback easily. To this end, the tube is generally parallel hybrid pipe not more than 4, and anti-parasitic oscillation resistor in series to each tube on the base or gate. Gate-source voltage JFET can not be reversed mos tube 20n60, can be stored at the open state, and insulated gate FET mos tube when not in use, because of its very high input resistance, shall each electrode shorted in order to avoid damage to the pipe leaving the role of the external electric field. mos tube 24n50, mos tube, are fertile Electronics Dongguan City is provided by Wal-Electronic Technology Co., Ltd .. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) FET in this area devoted boundless enthusiasm and passion, are fertile Electronics has been customer-centric, for customers to create the concept of value, quality, service win the market, and sincerely hope to cooperate with the community to create success, create brilliant. Welcome to the relevant business information, contact: Mr Chong. |
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Copyright © GuangDong ICP No. 10089450, Dongguan City is Wal-Electronic Technology Co., Ltd. All rights reserved.
Technical support: ShenZhen AllWays Technology Development Co., Ltd.
AllSources Network's Disclaimer: The legitimacy of the enterprise information does not undertake any guarantee responsibility
You are the 27471 visitor
Copyright © GuangDong ICP No. 10089450, Dongguan City is Wal-Electronic Technology Co., Ltd. All rights reserved.
Technical support: ShenZhen AllWays Technology Development Co., Ltd.
AllSources Network's Disclaimer: The legitimacy of the enterprise information does not undertake any guarantee responsibility