fqp50n06, FET, MOSFET, Fairchild FET during the installation, note the location of the installation should be avoided near the heating element; in order to prevent pipe vibration, it is necessary to tighten up the casing pipe; pinouts when bent, should be greater than the size of 5 mm at the root, to prevent bending the pins and cause leaks and other off. Must be added to the right radiator pipe after using the VMOS. In VNF306 as an example, the installation of the pipe 140 × 140 × 4 (mm) of the heat sink after K1837 FET, the maximum power in order to achieve 30W. fqpf8n60c, FET FET, MOSFET FQL40N50 MOSFET, Fairchild MOS FET due to high input impedance 47N60C3 FET, so the transport, storage must be shorted leads, use metal shielding packaging to prevent external induction bound gate breakdown. Pay particular attention to, can not be placed in a MOS FET plastic box, when you save the best on the metal box, but also pay attention to the tube moisture. 47N60C3 FET _ are fertile Electronics (certified) _ FET Dongguan City is provided by Wal-Electronic Technology Co., Ltd. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) is Dongguan, FET leader, over the years, the company is implementing the scientific management, innovation and development, the principle of honesty and trustworthiness, and satisfy customer needs. Wal-electronics leader in the positive with the staff warmly welcome all inquiries negotiations to create a positive future Wal-electron better.