fqpf8n60c, FET, MOSFET, Fairchild (1) In order to secure the use of FET K1837 FET, the circuit design can not exceed the power dissipation FET tube, the maximum drain-source voltage, maximum gate-source voltage and The maximum current limit and other parameters. (2) The type FET when used, must be in strict accordance with the requirements of the access circuit bias, to comply with the FET bias polarity. As JFET between gate and source-drain PN junction, N-channel tube grid can not add positive bias; P-channel tube can not add negative gate bias irf540n, to-263 47N60C3 FET, patch field effect transistors, power MOSFET in order to prevent the FET gate induced breakdown, requires all test equipment, workstations, electric iron, line itself must have a good grounding; pin during welding, the first welding source; in even the Prior to the circuit, all the lead end of the tube to keep each other shorting state, and only then after short welding material removed; when the tube is removed from the shelf components, should be in an appropriate manner to ensure that the human body, such as the use of ground grounding ring; of course, If you can use advanced gas-heat electric iron 96N20 FET, welding FET is quite easy, and ensure safety; not turn off the power at the time, absolutely can not put the tube inserted or removed from the circuit in the circuit. More safety measures must be taken when using the FET. FQL40N50 FET | MOSFET | are fertile Electronics Dongguan City is provided by Wal-Electronic Technology Co., Ltd. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) strong, credible, FET and other industries in Dongguan, Guangdong has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead the electronics are fertile and you hand into the brilliant, for a better future!