fqpf8n60c, FET, MOSFET, Fairchild MOS FET due to the extremely high input impedance, so the transport, storage must be shorted leads, use metal shielding packaging to prevent foreign induction bound gate breakdown. Pay particular attention to, can not be placed in a MOS FET plastic box, when you save the best on the metal box, but also pay attention to the tube moisture. g40n60, FET, power MOSFET, IGBT for power FET FET, a good heat dissipation. Because the power FET use under high load conditions, must be designed radiator IRFB61N15D FET enough to ensure that the housing temperature does not exceed the rating IRFB4115 FET, the device long-term stable and reliable work. In short, to ensure the safe use of FET, the notes are diverse, but also a variety of security measures large current FET, the majority of professional and technical personnel, especially the majority of electronic enthusiasts, to be based on their actual situation, to take practical measures, safely and effectively with good FET. IRFP4332 FET, are fertile Electronics (certified), FET provided by the Dongguan City is Wal-Electronic Technology Co., Ltd. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) is Dongguan, FET leader, over the years, the company is implementing the scientific management, innovation and development, the principle of honesty and trustworthiness, and satisfy customer needs. Wal-electronics leader in the positive with the staff warmly welcome all inquiries negotiations to create a positive future Wal-electron better.