TYN812 12A, 800V four-way thyristor structure P1N1P2N2 structure thyristor SCR shape no matter how they die is P-type and N-type silicon silicon composition. See Figure 1. It has three a PN junction (J1, J2, J3), J1 from P1 layer structure leads to the anode A, drawn from the N2 layer cathode K, drawn from the P2 layer control electrode G, so it is a three-terminal semiconductor devices four-Can silicon controlled rectifier SCR is a very important power devices can be used for control of high voltage and high current. Thyristor switching device mainly used in terms of SCR T405-600T, or blocking the device from the closed state to an opened state or conductive, and vice versa. SCR device and the bipolar transistor are closely related SCR 2P4M, both processes are involved in the conduction of electrons and holes, but the switch mechanism thyristor and bipolar transistor are different SCR C106G, and because of different device structures, SCR devices have relatively wide range of current, voltage control. Today's SCR devices rated current can be from a few milliamps to more than 5000A, rated voltage can exceed 10000V. The following will discuss the basic SCR device works, and then give some SCR power and high-frequency devices. SCR 2P6M, are fertile Electronics (certified), SCR provided by the Dongguan City is Wal-Electronic Technology Co., Ltd. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) (www.dgmydz.com) is Dongguan, FET leader, over the years, the company is implementing the scientific management, innovation and development, the principle of honesty and trustworthiness, the maximum limits to meet customer needs. Wal-electronics leader in the positive with the staff warmly welcome all inquiries negotiations to create a positive future Wal-electron better. You can also access (www.dgmydz.com/supply_details_49751330.html), for more information about the company.