Triac Schematics - naming 1, TRIAC: three side: TRIode (take the first three letters); AC semiconductor switch: ACsemiconductor switch (taking the first two letters). Combinations of the above two terms as "TRIAC", Chinese translation meaning "triac switch." Thus "TRIAC" is triac collectively. 2 SCR T405-600T, BCR: bi: Bi-directional (take the first letter); control: Controlled (take the first letter); rectifier: Rectifier (take the first letter). Then a combination of these three groups of the first letter from the English noun: "BCR", Chinese translation meaning "triac." To "BCR" to name a typical triac manufacturers such as Japan's Mitsubishi, such as: BCR1AM-12, BCR8KM, BCR08AM more. 3, BT: bi: Bi-directional (take the first letter); three-terminal: Triode (take the first letter). A combination of more than two words to "BT", but also on the triac product model name, typically manufacturers such as: STMicroelectronics ST companies, Philips -Philips company, are a way to name the triac. Representative models such as: PHILIPS's BT131-600D, BT134-600E, BT136-600E, BT138-600E, BT139-600E, etc., these are four quadrants / non-insulated / triac. SCR basic voltage characteristic due to the avalanche voltage is increased after the breakdown voltage of the junction J2, J2 junction avalanche multiplication occurs, generating a large number of electrons and holes in the junction region, the N1 region electrons, into the hole when P2 area. N1 electrons into the region by the P1 region and the junction J1 through N1 injection hole recombination zone, also, into the cavity by N2 and P2 region of the junction J3 region by injecting electrons into the P2 region of the composite, avalanche breakdown, N1 enters zone Electronic and holes into the P2 region of each compound can not be fully off thyristor C106G, so that the electron accumulation in the N1 region there SCR 2P4M, there is a hole accumulation in the P2 region, resulting in increased potential of P2 region, N1 potential drop zone, J2 junction becomes forward biased, just slightly increase the current SCR, voltage will quickly drop the so-called negative resistance characteristics, then J1, J2, J3 three junctions are at positive bias, SCR will enter the forward conduction state ----state, this time, its characteristics and general characteristics of PN junction forward similar SCR 2P4M_ are fertile Electronics (certified) _ SCR from Dongguan City is fertile Electronic Technology Limited. Dongguan City is Wal-Electronic Technology Co., Ltd. (www.dgmydz.com) (www.dgmydz.com) is Dongguan, FET leader, over the years, the company is implementing the scientific management, innovation and development, the principle of honesty and trustworthiness, the maximum limits to meet customer needs. Wal-electronics leader in the positive with the staff warmly welcome all inquiries negotiations to create a positive future Wal-electron better.